A Threshold Voltage Simulation of Hydrogen-Terminated Diamond MESFETs

Xiao Feng Zhuang; Qing Kai Zeng; Bing Ren; Zhen Hua Wang; Yue Lu Zhang; Li Ya Shen; Mei Bi; Jian Huang; Ke Tang; Ling Yun Shi; Yi Ben Xia; Lin Jun Wang

doi:10.4028/www.scientific.net/AMR.482-484.1093

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 482-484A Threshold Voltage Simulation of...

A Threshold Voltage Simulation of Hydrogen-Terminated Diamond MESFETs

Abstract:

In this paper, the threshold voltage of diamond film-based metal-semiconductor field effect transistors (MESFETs) has been simulated using Silvaco TCAD tools. The drain current (Id) versus gate voltage (Vg) relationship, and the distribution of acceptors in diamond surface conduction layer were also investigated. From the simulation results, it was found that the gate length contributed the most to the threshold voltage, while the doping depth almost had no impact on the threshold voltage value.