Preparation of (321) Oriented Silicon Clathrate Film by a Sol-Gel Method

Min Gong; Xing Wen Zhu; Tie Zhu Xu; Li Zhe Li; Wen Zhong Jiang; Xiao Zhou

doi:10.4028/www.scientific.net/AMR.487.111

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 487Preparation of (321) Oriented Silicon Clathrate...

Preparation of (321) Oriented Silicon Clathrate Film by a Sol-Gel Method

Abstract:

In this paper, Na⁺-doped silicon clathrate thin films were prepared on Si substrate by sol-gel method using zinc acetate and sodium carbonate as starting materials and the effects of the growth conditions on the structural of the films have been investigated by XRD, HRTEM, SAED analysis. The XRD results showed that there only existed a narrow and sharp peak around 2θ=32.94º which was assigned as the diffraction of Na₈Si₄₆ (321). However, the peak at 2θ=32.94º disappeared when it was heated to above 640°C due to the decomposition of the silicon clathrates. Minute Zn²⁺ ions in the gel was proved to promote the formation of Na^-doped silicon clathrates. The HRTEM photos revealed that the thickness of the films was only about 15nm, and there existed no obvious interfaces between the film and the silicon substrate.

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Periodical:

Advanced Materials Research (Volume 487)

Pages:

111-115

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.487.111

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Online since:

March 2012

Authors:

Min Gong, Xing Wen Zhu, Tie Zhu Xu, Li Zhe Li, Wen Zhong Jiang, Xiao Zhou

Keywords:

Nanometer, Silicon Clathrates, Sol-Gel Method, Thin Film

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