Surface Morphology and Interface Reaction of Cu/SiO2/Si (111) Systems Prepared by Radio Frequency Magnetron Sputtering

Bo Cao; Tong Rui Yang; Gong Ping Li

doi:10.4028/www.scientific.net/AMR.487.697

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 487Surface Morphology and Interface Reaction of...

Surface Morphology and Interface Reaction of Cu/SiO₂/Si (111) Systems Prepared by Radio Frequency Magnetron Sputtering

Abstract:

The Cu thin films were prepared at room temperature by radio frequency magnetron sputtering on p-type Si (111) substrates. The surface morphology and interface reaction of Cu thin films were studied at different deposition condition by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results show that the existence of the native silicon oxide layer suppresses the interdiffusion and interface reaction of Cu and Si. The formation of the copper-silicide phase is observed by XRD when the annealing temperature arrives at 450 °C.

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Periodical:

Advanced Materials Research (Volume 487)

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697-700

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.487.697

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Online since:

March 2012

Authors:

Bo Cao, Tong Rui Yang, Gong Ping Li

Keywords:

Cu Films, Interface Reaction, Radio Frequency Magnetron Sputtering, Scanning Electron Microscope (SEM), Surface Morphology, X-Ray Diffraction (XRD)

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References

[1] J.V. Barth, G. Costantini and K. Kern: Nature. Vol. 437 (2005), p.671.

Google Scholar

[2] R. Balachandran, H.K. Yow, B.H. Ong, K.B. Tan, K. Anuar and H.Y. Wong: Int. J. Electrochem. Sci. Vol. 6 (2011), p.3564.

Google Scholar

[3] Y. Wu, J. Xiang, C. Yang, W. Lu and C. M. Lieber: Nature. Vol. 430 (2004), p.61.

Google Scholar

[4] X.X. Gao, Y.H. Jia, G.P. Li, S.J. Cho and H. Kim: Chin. Phys. Lett. Vol. 28 (2011), p.033601.

Google Scholar

[5] H. Guo, Y. M. Zhang, D.Y. Qiao, L. Sun and Y. M. Zhang: Chin. Phys. Vol. 16 (2007), p.1753.

Google Scholar

[6] T.G. Woo, I.S. Park and K.W. Seol: Kor. J. Mater. Res. Vol. 17 (2007), p.283.

Google Scholar

[7] N. Benouattas, A. Mosser, D. Raiser, J. Faerber and A. Bouabellou: Appl. Surf. Sci. Vol. 153 (2000), p.79.

DOI: 10.1016/s0169-4332(99)00366-9

Google Scholar

[8] S.X. Song, Y.Z. Liu, D.L. Mao, H.Q. Ling and M. Li: Thin Solid Films. Vol. 476 (2005), p.142.

Google Scholar

[9] M. Moriyama, T. Kawazoe, M. Tanaka and M. Murakami: Thin Solid Films. Vol. 416 (2002), p.136.

Google Scholar

[10] A.V. Kuchuk, J. Ciosek, A. Piotrowska, E. Kaminska, A. Wawro, O.S. Lytvyn, L. Nowicki and R. Ratajczak: Vacuum. Vol. 74 (2004), p.195.

DOI: 10.1016/j.vacuum.2003.12.121

Google Scholar

[11] Y.Z. Liu, S.X. Song, D.L. Mao, H.Q. Ling and M. Li: Microelectron. Eng. Vol. 75 (2004), p.309.

Google Scholar

[12] C.A. Chang: J. Appl. Phys. Vol. 66 (1989), p.1163.

Google Scholar