Optimization Study on Preparation of Macroporous Silicon on P-Type Silicon Substrate by Electrochemical Etching

Wei Ying Ou; Lei Zhao; Zhao Chen Li; Hong Wei Diao; Wen Jing Wang

doi:10.4028/www.scientific.net/AMR.488-489.1343

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 488-489Optimization Study on Preparation of Macroporous...

Optimization Study on Preparation of Macroporous Silicon on P-Type Silicon Substrate by Electrochemical Etching

Abstract:

Low cost electrochemical etching method was utilized to prepare macroporous silicon on p-type silicon substrate in dilute HF solution. By optimizing the substrate resistivity, the etching current density, and the etching time, excellent macroporous silicon was obtained on 15 Ω•cm p-type silicon substrate with the pore diameter of about 2 μm, the pore depth of about 30 μm, and the surface pore density up to ~107/cm2. Such macroporous silicon gave out an excellent antireflective performance with the reflectance lower than 4% in a wide spectral range of 400-1000 nm. The low reflectance combined with the deep pore morphology provides an attractive potential to fabricate radial p-n junction solar cells on such macroporous silicon.

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Periodical:

Advanced Materials Research (Volumes 488-489)

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1343-1347

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https://doi.org/10.4028/www.scientific.net/AMR.488-489.1343

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Online since:

March 2012

Authors:

Wei Ying Ou, Lei Zhao, Zhao Chen Li, Hong Wei Diao, Wen Jing Wang

Keywords:

Electrochemical Etching, Macroporous Silicon, P-Type Silicon

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