Properties of Ag Doped CdTe Thin Film Prepared by Stacked Elemental Layer (SEL) Method

Subramani Shanmugan; Devarajan Mutharasu; Hassan Zainuriah

doi:10.4028/www.scientific.net/AMR.488-489.742

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 488-489Properties of Ag Doped CdTe Thin Film Prepared by...

Properties of Ag Doped CdTe Thin Film Prepared by Stacked Elemental Layer (SEL) Method

Abstract:

Thin films of elements (Cd,Te,Ag) were layered as a stack (Te/Cd/Te/Ag/Cd) for doping process with different Ag and Cd thickness by SEL method. The XRD results were depicted the presence of Cubic phase CdTe with (111) orientation along with Ag2Te, CdAgTe, AgTe phases. The peaks related to Ag atom at higher concentration evinced the presence of non-reacted Ag atoms on the surface with higher Ag concentration. The observed results showed the growth of CdTe crystals in (111) orientation with high Ag concentration. The AFM results of the annealed stack were clearly indicated the influence of Ag concentration in grain growth as well as surface roughness. Photo-resistivity studies of the annealed stacks also revealed the effect of Ag concentration in reducing the resistance with difference light sources. The observed results suggested that the SEL method could be used for effective doping of transition metals to achieve desired properties.

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Periodical:

Advanced Materials Research (Volumes 488-489)

Pages:

742-747

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.488-489.742

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Online since:

March 2012

Authors:

Subramani Shanmugan, Devarajan Mutharasu, Hassan Zainuriah

Keywords:

Morpholoy, Photo-Resistivity, Semiconductor, Silver, Stacked Elemental Layer, Thin Film

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