Investigation of Correlation between Polishing Characteristic and Pad Roughness during Chemical Mechanical Planarization Process

Hojoong Kim; Andy Kim; Taesung Kim

doi:10.4028/www.scientific.net/AMR.488-489.831

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 488-489Investigation of Correlation between Polishing...

Investigation of Correlation between Polishing Characteristic and Pad Roughness during Chemical Mechanical Planarization Process

Abstract:

The Chemical mechanical planarization (CMP) process has become a primary planarization technique required for the manufacture of advanced integrated circuit (IC) devices. As the feature size of IC chips shrinks down to 65 nm and below, the role of CMP as a robust planarization process becomes increasingly important. In this work, we evaluated surface roughness of CMP pad to correlate the roughness with CMP performance such as material removal rate (MRR) and pad lifetime. Pad surface was analyzed by 3-dimensional profiler and scanning electron microscope (SEM). We found that MRR could be varied with the pad life time and roughness. We also found that suitable roughness range is exist to get stable CMP performance. Finally, we introduced ‘pre-conditioning’ method to manage the roughness of CMP pad to get stable CMP performance at the initial pad life time.

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Periodical:

Advanced Materials Research (Volumes 488-489)

Pages:

831-835

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.488-489.831

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Online since:

March 2012

Authors:

Hojoong Kim, Andy Kim, Taesung Kim

Keywords:

Chemical Mechanical Planarization, Interferometry, Surface Roughness (SR)

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