Current–Voltage Characteristics of n-Al0.08In0.08Ga0.84N Schottky Diode Using Pt Metal Contact

Alaa J.  Ghazai; Abu Hassan Haslan; Zainuriah Hassan

doi:10.4028/www.scientific.net/AMR.501.226

Paper Titles

Effect of Water Content on Structural and Photoelectrochemical Properties of Titania Nanotube Synthesized in Fluoride Ethylene Glycol Electrolyte
p.204

Photoluminescence Studies of Silicon Self-Assembled Quantum Dots
p.209

ZnO Nanorod Arrays Coated with Eosin-Y at Different Concentrations for Inverted Bulk Heterojunction Organic Solar Cells
p.214

Effect of Rapid Thermal Annealing Time on the Structural and Optical Properties of Layered Structured SiO_x/Au/SiO_x Film
p.221

Current–Voltage Characteristics of n-Al_0.08In_0.08Ga_0.84N Schottky Diode Using Pt Metal Contact
p.226

Effect of Ethylenediamine Tetraacetic Acid in Electrochemical Deposition of Zinc Selenide
p.231

Effect of Annealing temperature on the Structural and Magnetic Properties of Tb_xY_3-xFe₅O₁₂(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process
p.236

Synthesis and Characterization of Carboxymethyl κ-Carrageenan for Dye-Sensitized Solar Cells Application
p.242

Cuprous Oxide Thin Films for a Photoelectrochemical Cell of ITO/Cu₂O/PVC-LiClO₄/Graphite
p.247

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 501Current–Voltage Characteristics of...

Current–Voltage Characteristics of n-Al_0.08In_0.08Ga_0.84N Schottky Diode Using Pt Metal Contact

Abstract:

In this study, current-voltage (I-V) measurements at room temperature (RT) of platinum (Pt) metal contact combine with n-Al0.08In0.08Ga0.84N thin film which grown epitaxially by molecular beam epitaxy (MBE) technique on sapphire substrate to form Schottky diode have been characterized. Schottky barrier heights of diode related with the high work function metal of Pt electrode was measured and investigated. Pt metal was fabricated using RF-sputtering technique. The effect of annealing temperature ranged from 300 °C to 600 °C on the structural and electrical properties has been studied. The results revealed that in spite of the various annealing temperature used there is no change in XRD diffraction peak observed in Pt contact. Furthermore, at 400 °C the best surface morphology was obtained and the value of SBH and ideality factor (n) was 0.76 eV and, 1.03 respectively. This concludes that at this annealing temperature Pt metal exhibited optimum (I-V) rectifying characteristics of Pt/Al0.08In0.08Ga0.84N Schottky diode.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 501)

Pages:

226-230

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.501.226

Citation:

Cite this paper

Online since:

April 2012

Authors:

Alaa J. Ghazai, Abu Hassan Haslan, Zainuriah Hassan

Keywords:

Ideality Factor, Pt Metal, Quaternary AlInGaN, Schottky Barrier Height SBH, Work Function

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] S.J. Young, L.W. Ji, T.H. Fang, S.J. Chang, Y.K. Su and X.L. Du, ZnO ultraviolet photodiodes with Pd contact electrodes, Acta Materialia 55 (2007) 329-333.

DOI: 10.1016/j.actamat.2006.07.042

Google Scholar

[2] W.C. Lai, S.J. Chang, M. Yokoyam, J.K. Sheu and J.F. Chen, InGaN-AlInGaN multi quantum-well LEDs, IEEE Photon, Technol. Lett., 13 (2001) 559-561.

DOI: 10.1109/68.924019

Google Scholar

[3] T. Kyono, H. Hirayama, K. Akita, T. Nakamura and K. Ishibashi, Effects of In composition on ultraviolet emission efficiency in quaternary InAlGaN light-emitting diodes on freestanding GaN substrates and sapphire substrates, J. Appl. Phys., 98 (2005) 113514-113521.

DOI: 10.1063/1.2134885

Google Scholar

[4] J. Li, K.B. Nam, K.H. Kim, J.Y. Lin, and H.X. Jiang, Growth and optical properties of InxAlyGa1-x-yN quaternary alloys, Appl. Phys. Lett., 78 (2001) 61-63.

DOI: 10.1063/1.1331087

Google Scholar

[5] S. H. Baek, J. O. Kim, M. K. Kwon, I. K. Park, S. I. Na, J. Y. Kim, B. Kim, and S. J. Park: IEEE Photonics Technol. Lett. 18 (2006) 1276.

Google Scholar

[6] M. Y. Ryu, J. Q. Chen, E. Kuokstis, J. W. Yang, G. Simin, and M. Asif Khan, Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials, Appl. Phys. Lett., 80 (2002) 3730-3732.

DOI: 10.1063/1.1481766

Google Scholar

[7] V. Rajagopal, M. Ravinandan, P. Koteswara, C. J. Choi, j. Mater. Sci, 20 (2009) 1018-1025.

Google Scholar

[8] J. Wang, D. G. Zhao, Y. P. Sun, L. H. Duan, Y. T. Wang, S. M. Zhang, H. Yang, S. Zhou, M. Wu, J. Phys. D Appl. Phys. 36 (2003) 1018.

Google Scholar

[9] C. L. Yu, C. H. Chen, S. J. Chang, P. C. Chang, J. Elect. Chem. Soc. 154 (2007) J71.

Google Scholar

[10] Y.C. Lee, Z. Hassan, M.J. Abdullah, M.R. Hashim, K. IbrahimDark current characteristics of thermally treated contacts on GaN-based ultraviolet photodetectors Microelectronic Engineering 81 (2005) 262–267.

DOI: 10.1016/j.mee.2005.03.017

Google Scholar