Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In2O3 Powder Together with the N-Implantation

Mao Nan; Chun Yang Kong; Guo Ping Qin; Hai Bo Ruan

doi:10.4028/www.scientific.net/AMR.503-504.350

Paper Titles

Metal-Modulated Growth of Au Nanoparticles by Electropolymerized 8-Hydroxyquinoline Films
p.334

Simulation of Proton Irradiation Damage for Fe-Ni Magnetic Alloy
p.338

Effects of the Parameters of Sloping Plate Process on Microstructures of A2017 Alloy
p.342

Synthesis and Characterization of Cobalt Nanoparticles by Cobalt-Acetate
p.346

Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In₂O₃ Powder Together with the N-Implantation
p.350

Interpretation of the Wood Drum of the Wa Nationality from a Symbolic Semiotic Perspective
p.354

Film Morphology and Film-Forming Ability of Supramolecular Compound Self-Assembled with Amino Polysiloxane Emulsion and Carboxyl Polysiloxane Emulsion
p.358

Stress Analysis in Ceramic Inlays Restored Premolars
p.363

Research on Water Cut of Silicon Steel Plate
p.367

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 503-504Fabrication and Study of P-Type ZnO Films by RF...

Fabrication and Study of P-Type ZnO Films by RF Magnetron Sputtering of ZnO: In₂O₃ Powder Together with the N-Implantation

Abstract:

The N-In codoped p-type ZnO films with preferential orientation along (002) plane have been fabricated on quartz glass substrates using radio frequency magnetron sputtering technique of ZnO:In2O3 powder target combining with N-implantation. The samples annealed at 700°C deserved the optimal properties, the best of which exhibits electrical characteristics with the hole concentration of 4.04×1018 cm-3, the lowest resistivity of 1.15 Ωcm and Hall mobility of about 1.35 cm2V-1s-1. The effects of post-annealing on the microstructure and electronic properties of the codoped ZnO films is analyzed via SEM, XRD, XPS and Hall measurements system, and the trend of carrier concentration with annealing time is discussed theoretically.

You might also be interested in these eBooks

Frontiers of Manufacturing Science and Measuring Technology II

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 503-504)

Pages:

350-353

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.503-504.350

Citation:

Cite this paper

Online since:

April 2012

Authors:

Mao Nan, Chun Yang Kong, Guo Ping Qin, Hai Bo Ruan

Keywords:

Annealing, Ion Implantation, N-In Codoping, P-Type ZnO Film, Radio Frequency Magnetron Sputtering of Powder Target

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] J D Ye , S L Gu , S M Zhu et al. J. Cryst Growth Vol. 283(2005), pp.279-285.

Google Scholar

[2] N Naghavi , L Dupont , C Marcel et al. Electrochimica Acta Vol. 46(2001), p.2007-(2013).

Google Scholar

[3] T Yamamoto, H Katayama-Yoshida. J. Cryst Growth Vol. 214(2000), pp.552-555.

Google Scholar

[4] Y Kanai. Japn. J. Appl. Phys, 1990, 29: 1426-1430.

Google Scholar

[5] T Yamamoto, H Katayama-Yoshida. Physica B Vol. 302(2001), pp.155-162.

Google Scholar

[6] M Kumar, T H Kim, S S Kim et al. Appl. Phys. Lett Vol. 89(2006), pp.112103-112105.

Google Scholar

[7] J M Bian , X M Li , X D Gao et al. Appl. Phys. Lett Vol. 84(2004), pp.541-543.

Google Scholar

[8] F Zhuge, L P Zhu, Z. Z. Ye et al. Appl. Phys. Lett Vol. 87(2005), pp.092103-092105.

Google Scholar

[9] M Futsuhara, K Yoshioka, O Takai. Thin Solid Films Vol. 322(1998), pp.274-281.

Google Scholar

[10] R Carin, J P Deville, J Werckmann. Surf. Interface Anal Vol. 16(1990), pp.65-69.

Google Scholar

[11] L L Chen, Z Z Ye, J G Lu et al. Chemical Physics Letters Vol. 432(2006), pp.352-355.

Google Scholar

[12] C Y Kong, G P Qin, H B Ruan et al. Chin. Phys. Lett Vol. 3(2008), pp.1128-1130.

Google Scholar

[13] H. Katayama-Yoshida, K. Sato, H. Kizaki et al. Appl. Phys. A Vol. 89(2007), pp.19-27.

Google Scholar