Surface Integrity Induced by Abrasive Machining Sapphire Wafer

Dong Hui Wen; Yue Hua Wan; Tao Hong

doi:10.4028/www.scientific.net/AMR.53-54.311

Paper Titles

The Properties and the Influence Factors of the White Layer in the Surface Grinding
p.285

The Characteristics of Surface Residual Stresses by Plane Grinding Invar and the Effects of Them on Structural Stability
p.293

Simulation System for Quality Prediction and Parameters Optimization when Machining Ceramics Die Material
p.299

Surface Integrity and Fatigue Property of a High Speed Milled Titanium Alloy
p.305

Surface Integrity Induced by Abrasive Machining Sapphire Wafer
p.311

Study on Variable Spot Cladding for Large Area Laser Surface Modification
p.319

Cone-Shaped Hard Carbon Films Grown by Inductively Coupled RF Plasma with RF or DC Bias Voltage
p.325

Influence of Surface Morphology of Diamond Films on their Frictional Behaviors in Dry and Water Environments
p.331

Laser Power Characterization Method for Fabrication of Centrosymmetric CR-DOEs Mask
p.337

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Surface Integrity Induced by Abrasive Machining Sapphire Wafer

Abstract:

Surface integrity of Sapphire wafer is the frontier technology to grow high quality AlN/GaN films for high brightness light-emitting diode. Surface damage measurement methods for single crystal sapphire were introduced firstly. Classical types of surface deformation induced by abrasive machining, such as lattice deformation, strain, scratch, crack versus abrasive grits and chemical reaction were compared. With the development of modern grinding technology, depth of the damaged surface layer decreases from 10μm to 2μm or much less. Both crack, lattice deformation, twinning and strain were detected along the ground surface, only dislocation and strain were appeared for polished sapphire surface. Usually, depth of the damaged layer was less than 300nm using mechanical polishing process. Chemical mechanical polishing achieved the lowest depth of the damaged surface and best surface roughness, scratch depth was used to descript the damaged depth, which is about 1 nm, and so called no damage to the layer remains during chemical mechanical polishing process.