Cone-Shaped Hard Carbon Films Grown by Inductively Coupled RF Plasma with RF or DC Bias Voltage

G.F. Zhang; N. Ren; Y. Ren; X.D. Hou; Volker Buck

doi:10.4028/www.scientific.net/AMR.53-54.325

Paper Titles

Simulation System for Quality Prediction and Parameters Optimization when Machining Ceramics Die Material
p.299

Surface Integrity and Fatigue Property of a High Speed Milled Titanium Alloy
p.305

Surface Integrity Induced by Abrasive Machining Sapphire Wafer
p.311

Study on Variable Spot Cladding for Large Area Laser Surface Modification
p.319

Cone-Shaped Hard Carbon Films Grown by Inductively Coupled RF Plasma with RF or DC Bias Voltage
p.325

Influence of Surface Morphology of Diamond Films on their Frictional Behaviors in Dry and Water Environments
p.331

Laser Power Characterization Method for Fabrication of Centrosymmetric CR-DOEs Mask
p.337

Characteristic of Si-Doped DLC Films on TC4 and Cr12 Substrates
p.343

A New Solar Selective Absorbing Structure of Al-Al₂O₃ Cermet Composite Films by Pulsed Direct Current Magnetron Sputtering
p.349

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 53-54Cone-Shaped Hard Carbon Films Grown by Inductively...

Cone-Shaped Hard Carbon Films Grown by Inductively Coupled RF Plasma with RF or DC Bias Voltage

Abstract:

A simple method capable of producing uniform, large-area cone arrays of carbon films was found in a planar inductively coupled RF plasma source. The technique employs a DC or RF bias to substrate holder. Si substrates were mechanically pretreated using diamond paste. Cone-shaped carbon crystals preferentially nucleate and grow on the scratches using relatively low bias. Variation of the depositing conditions enables control of the cone density, geometry, and height. The cone arrays are believed to can significantly improve the field emission properties and have a tempting perspective in the microelectromechanical system (MEMS).