Influence of Ar Pressure on the Structure and Electrical Properties of TiO2 Nanofilm Materials

Li Lin Zhan; Ying Lian Wang

doi:10.4028/www.scientific.net/AMR.531.27

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 531Influence of Ar Pressure on the Structure and...

Influence of Ar Pressure on the Structure and Electrical Properties of TiO₂ Nanofilm Materials

Abstract:

Highly conductive and transparent TiO2 nano films have been deposited by R.F. magnetron sputtering method on glass substrates. The influence of argon gas pressure on deposition rate, electrical performance and surface morphology has been studied through the ellipsometric thickness gauge, scanning electron microscopy and energy disperse spectroscopy. The results show that, with the rise of argon gas pressure, the deposition rate reduces, resistivity decreases, roughness increases. When Ar pressure is 3.0Pa, the resistivity reached 3.3×105Ω•cm, sputtering pressure is lower, the surface atomic diffusion capacity is stronger, the film is more dence.

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Periodical:

Advanced Materials Research (Volume 531)

Pages:

27-30

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.531.27

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Online since:

June 2012

Authors:

Li Lin Zhan, Ying Lian Wang

Keywords:

Argon Gas Pressure, Electronic Properties, Magnetron Sputtering, TiO₂ Nanofilm Materials

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