Current-Voltage Characterization on Au-DNA-Au Junctions under the Influence of Magnetic Field

Nadia Mahmoudy Khatir; Seyedeh Maryam Banihashemian; Vengadesh Periasamy; Wan Haliza Abd Majid; Saadah Abdul Rahman

doi:10.4028/www.scientific.net/AMR.535-537.1350

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Current-Voltage Characterization on Au-DNA-Au Junctions under the Influence of Magnetic Field
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 535-537Current-Voltage Characterization on Au-DNA-Au...

Current-Voltage Characterization on Au-DNA-Au Junctions under the Influence of Magnetic Field

Abstract:

We utilized Deoxyribonucleic acid (DNA) strands immobilized between a metal gap and its behavior was investigated. The DNA strands were initially prepared using the PCR method while gaps of 10.00 μm lengths were created on gold layer deposited onto silicon substrate. Once immobilized, current-voltage characterization was carried out on the Au-DNA-Au structure fabricated under the presence and absence of magnetic field. Experimental results clearly highlight the behavior of the DNA strands similar to semiconductor materials. An exponential decrease observed in the current in presence of external magnetic field suggests possible future application as a magnetic sensor.

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Periodical:

Advanced Materials Research (Volumes 535-537)

Pages:

1350-1353

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.535-537.1350

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Online since:

June 2012

Authors:

Nadia Mahmoudy Khatir, Seyedeh Maryam Banihashemian, Vengadesh Periasamy, Wan Haliza Abd Majid, Saadah Abdul Rahman

Keywords:

DNA Sensor, I-V Curve, Magnetic Sensor

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