Characterization of Indium-Doped CdZnTe Crystal Grown under Te-Rich Conditions

Gao Li Wei; Lin Jun Wang; Ji Jun Zhang; Zheng Wen Yuan; Kai Feng Qin; Jia Hua Min; Xiao Yan Liang; Yi Ben Xia

doi:10.4028/www.scientific.net/AMR.535-537.1446

Paper Titles

Sound Insulation Property of Warp Knitted Fabrics
p.1429

Tensile Property Test Analysis of Double Protein Modified Fiber
p.1433

Creation Based on Superhydrophobic Soot Waterproofing Materials Obtained in Flames
p.1437

Synthesis of Novel Separation Materials Based on Molecular Imprinting Technology
p.1441

Characterization of Indium-Doped CdZnTe Crystal Grown under Te-Rich Conditions
p.1446

Physical Chemistry of Fermentative Hydrogen Production Mechanism
p.1450

A Geometric Analysis of the Loop Form of a Tricot Stitch Knitted Fabric
p.1455

Analysis of the Influence of Static Flow Resistance on the Sound Absorption Properties of Aluminum Foam
p.1459

Application of the KH560 on Improving the Interface Fastness of Composites of Starch and Cotton Fiber
p.1463

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 535-537Characterization of Indium-Doped CdZnTe Crystal...

Characterization of Indium-Doped CdZnTe Crystal Grown under Te-Rich Conditions

Abstract:

CdZnTe (CZT) crystals with a diameter of 52 mm was grown using low pressure Bridgman method and were indium-doped under Te-rich conditions. Results showed the Te concentration was almost the same in different part of the as-grown ingot. Through IR transmission, Te inclusion with regular triangular or circular shapes could be observed, and the size of Te inclusion was around 7 µm and the concentration was 1.5  105 cm-3 for the CZT in the middle part of the ingot. I-V characteristic showed a good linear behavior with a resistivity of ~1010 Ω•cm.