Photoluminescence Properties of β-SiC Nanoparticles by Electric-Pulses Discharge in Liquid-Phase Compound

Abstract:

β-SiC nanoparticles have been synthesized by electric pulses discharge (EPD) in Hexamethyl disilane. Dependence of photoluminescence (PL) from the samples with air-annealing are presented. Emission bands around 400 nm and 470 nm are observed at room temperature. The corresponding PL properties and possible mechanisms are discussed. The 400 nm peak may be result from the atom excess defect center at the surfaces of β-SiC nanocrystallites, while the 470 nm peak is believed to be related to the defects created in the interface boundary between β-SiC nanocrystallites and amorphous SiO₂.

• Periodical: Advanced Materials Research (Volumes 535-537)
• Pages: 477-480
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.535-537.477
• Online since: June 2012
• Authors: Kai Du, Rong Hui Wei, Feng Wei Liu, Shuai Sun, Li Ben Li
• Keywords: Luminescence, Nanostructure, Semiconductor, Silicon Carbide (SiC)

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