Effect of Sc Doping on Ferroelectric and Dielectric Properties of Bi_0.9La_0.1FeO₃ Thin Film by Sol-Gel Process

Abstract:

Pure Bi0.9La0.1Fe1-xScxO3 (x = 0, 0.05, 0.10, 0.15, 0.20) (BLFSO) thin films were deposited on conductive indium tin oxide (ITO)/glass substrates through a simple sol-gel process. The effect of Sc doping on the XRD, microstructure, dielectric and ferroelectric properties of BLFO films was studied. Compared to counterparts of Bi0.9La0.1FeO3 (BLFO) film, the grain refinement of all films is obvious. When the value of Sc is 0.15, the double remanent polarization 2Pr is effectively enhanced with the extreme value of 17.7µC/cm2. The dielectric constant exhibits a trends of increase firstly and then decrease with the increase amount of scandium level.

• Periodical: Advanced Materials Research (Volumes 538-541)
• Pages: 78-82
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.538-541.78
• Online since: June 2012
• Authors: Xiao Yan Zhang, Xi Wei Qi, Jian Quan Qi, Xuan Wang, Huan Huan Chen, Gui Fang Sun, Rui Xia Zhong
• Keywords: Bi_0.9La_0.1FeO₃ Film, Dielectric, Ferroelectric, Sc Doping, Sol-Gel Process

References

[1] H. Schmid: Ferroelectrics Vol. 162 (1994), p.317

[2] N. A. Hill: Journal of Physical Chemistry B Vol. 104 (2000), p.6694

[3] X. W. Qi, J. Zhou and Z. X. Yue: Adv. Funct. Mater Vol. 14 (2004), p.920

[4] N. A. Hill and A Filippetti: Journal of magnetism and magnetic materials Vol. 242-245 (2002), p.976

[5] S. Das, S. Basu and S. Mitra: Thin Solid Films Vol. 518 (2010), p.4071

[6] H. Zheng, J. Wang, S. E. Lofland, Z. Ma, L. Mohaddes-Ardsbili, T. Zhao, L. Salamanca-Riba, S. R. Shinde, S. B. Ogale, F. Bai, D. Viehland, Y. Jia, D. G. Schlom, M. Wuttig, A. Roytburd and R. Ramesh: Science Vol. 303(2004), p.661

DOI: 10.1126/science.1094207

[7] K. F. Wang, J. M. Liu and Z. F. Ren: Adv. Phys. Vol. 58 (2009), p.321

[8] B. B. Van Aken, T. T. M. Plastra, A. Filippetti and N. A. Spaldin: Nature Mater. Vol. 3 (2004), p.164

[9] J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Vieland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig and R. Ramesh: Science Vol. 299 (2003), p.1719

DOI: 10.1126/science.1080615

[10] S. H. Jo, S. G. Lee and S. H. Lee: Mater. Res. Bull. Vol. 47 (2012), p.409

[11] C. Michel, J. M. Moreau and G. D. Achenbach: Solid State Commun. Vol. 7 (1969), p.701

[12] D. Lee, M. G. Kim, S. Ryu, H. M. Jang and S. G. Lee: Appl. Phys. Lett. Vol. 86 (2005). P. 222903

[13] C. Ederer and N. A. Spaldin: Phys. Rev. B Vol. 71 (2005), p.060401

[14] Z. Quan, W. Liu, H. Hu, S. Xu, B. Sebo, G. J. Fang, M. Y. Li and X. Z. Zhao: J. Appl. Phys. Vol. 104 (2008), p.084106

[15] Q. Y. Xu, Z. Wen and J. L. Gao: Physica B Vol. 406 (2011), p. (2025)

[16] D. H. Li, X. Q. Sun, X. H. Chuai, Z. F. Wu, Z. J. Cao, Y. F. Yan and D. M. Zhang: J. Cryst. Growth Vol. 338 (2012), p.85

[17] S. R. Shannigrahi, A. Huang, D. Tripathy and A. O. Adeyeye: J. Magn. Magn.Mater. Vol. 320 (2008), p.2215

[18] Y. Wu and G. Z. Cao: J. Mater. Sci. Lett. Vol. 19 (2000), p.267

[19] M. Grossmann, O. Lohse, D. Bolten, U. Boettger, T. Schneller and R.Waser: J. Appl. Phys. Vol. 92 (2002), p.2680

[20] C. J. Lu, X. L. Liu, X. Q. Chen, C. J. Nie, G. L. Rhun, S. Senz and D. Hesse: Appl. Phys. Lett. Vol. 88 (2006), p.162905