The Characterization of CdS Thin Film Prepared by CBD Method

Peng Ju Cao; Ping Fan; Guang Xing Liang; Zhuang Hao Zheng; Dong Ping Zhang; Xing Min Cai; Jing Rong Chi

doi:10.4028/www.scientific.net/AMR.538-541.88

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 538-541The Characterization of CdS Thin Film Prepared by...

The Characterization of CdS Thin Film Prepared by CBD Method

Abstract:

CdS thin film was deposited onto glass substrates by the chemical bath deposition. The deposition temperature was maintained at 75 °C. The crystal structure, surface morphology, optical and electrical properties have investigated employing X-ray diffraction (XRD), scanning electron microscopy (SEM), spectrophotometer and seeback coefficient measurement, respectively. The XRD reveals CdS thin film grown at 75 °C has the mixed hexagonal and cubic structure. The optical band gap energy is 2.4 eV. The seeback coefficient is 197.3μV/k at room temperature. The electric resistivity of CdS thin film is in the order of 10000Ω•cm.

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Periodical:

Advanced Materials Research (Volumes 538-541)

Pages:

88-91

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.538-541.88

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Online since:

June 2012

Authors:

Peng Ju Cao, Ping Fan, Guang Xing Liang, Zhuang Hao Zheng, Dong Ping Zhang, Xing Min Cai, Jing Rong Chi

Keywords:

CdS Thin Film, Chemical Bath Deposition (CBD), Electrical Properties, Optical Property

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