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Properties of Vanadium Oxide Films Prepared by DC Reactive Magnetron Sputtering at Different Oxygen Partial Pressures

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Abstract:

Due to their unique physical and chemical properties, vanadium oxide thin films have become a hot research topic. In the present work, Vanadium oxide thin films were prepared by DC reactive magnetron sputtering at different oxygen partial pressure and thermally annealed in Ar atmosphere at 500°C for 2 hours. The microstructure, transmittance, optical band gap, resistivity, and temperature coefficient resistance (TCR) were measured. The results suggest that increasing of oxygen partial pressure can obviously improve the optical and electric properties

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Periodical:

Advanced Materials Research (Volumes 538-541)

Pages:

105-109

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.538-541.105

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Online since:

June 2012

Authors:

Ren Gui Huang, Dong Ping Zhang, Ting Zhang, Yan Li, You Tong Chen, Yong Lin Zhong, Ping Fan

Keywords:

Annealing, DC Reactive Magnetron Sputtering, Oxygen Flow Rate, Vanadium Oxide Film

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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