Carbon Nitride Films Prepared by PECVD in CH₄-NH₃ Precursor

Abstract:

Carbon nitride (CNx) films were fabricated by plasma enhanced chemical vapor deposition technology in methane-ammonia system, in which the plasma was excited by the hollow cathode glow discharge. The composition，microstructure and hardness of the deposited films were investigated by measurements employing X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and nano-indentation experiment. The results indicate that the nitrogen content in the film varies from 4.2 to 8.6 at.% and the nitrogen atoms are bonded to carbon atoms through C-N, C=N and C≡N bonds. Furthmore, higher nitrogen content is in favor of the formation of C-N bond, which may enhance the film hardness.

• Periodical: Advanced Materials Research (Volumes 538-541)
• Pages: 124-127
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.538-541.124
• Online since: June 2012
• Authors: Jing Ni, Xi Ping Hao
• Keywords: CN_x Films, FT-IR, Nano-Indentation, Nitrogen Content

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