Annealing Effects on W-Doped VO2 Thin Films Prepared from Magnetron Sputtering

Shuang Chen; Cui Zhi Dong; Li Fang Zhang; Zhi Ming Yu

doi:10.4028/www.scientific.net/AMR.538-541.101

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Annealing Effects on W-Doped VO₂ Thin Films Prepared from Magnetron Sputtering

Abstract:

W-doped VO₂ thin films were prepared by magnetron sputtering after annealing in vacuum. The structure, morphology, infrared transmittance and phase transition were characterized by X-ray diffractometer, atomic force microscopy(AFM), infrared spectrometer (IR) and differential thermal analysis(DTA), respectively. The results show that after vacuum annealing at 500 °C for 2h, the major phase of W doped films is VO₂. Dopant reduce the phase transition temperature of VO₂ thin films to 21.9°C.