Free Carrier Absorption Loss of Optical Phase Modulator

Abstract:

The effect of the free carrier absorption loss on the split-ridge waveguide based phase modulator is analyzed at 1.3 and 1.55 µm. The electrical device performance is predicted using the 2-D semiconductor package SILVACO software under DC operation. Based on the simulation results, it is shown that there is a penalty of increased free carrier absorption as the injected electrons and holes are getting higher. Meanwhile, the loss of the device at 1.3 µm is smaller than that of 1.55 µm at an equal applied voltage.

• Periodical: Advanced Materials Research (Volume 545)
• Pages: 355-358
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.545.355
• Online since: July 2012
• Authors: Hanim Abdul Razak, Hazura Haroon, Mardiana Bidin, P. Susthitha Menon, Sahbudin Shaari
• Keywords: Silicon Photonic, Silicon-on-Insulator (SOI), Split-Ridge Waveguide Based Phase Modulator

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