Study on Nickle Oxide Thin Film as Buffering Layer in Photovoltaic Solar Cells

Nan Hai Sun; Ya Fei Ren

doi:10.4028/www.scientific.net/AMR.546-547.38

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 546-547Study on Nickle Oxide Thin Film as Buffering Layer...

Study on Nickle Oxide Thin Film as Buffering Layer in Photovoltaic Solar Cells

Abstract:

A new buffering layer(nickle oxide thin film) of organic solar cells was presented. The device strcture is Anode/NiO/P3HT[regioregular of poly(3-hexylthiophene)]: PCBM[(6,6)-phenyl C61 butyric acid methyl ester] /Al. Nickle Oxide(NiO) thin film is a good alternative of hole tansporting layer. We investigates the film from physical and electrical aspects, such as morphology, deposition temperature, thickness etc. The best power conversion efficiency of device we got with NiO buffering layer is 2.49%, which is hundred times of ones without NiO buffering layer.We find that the optimum fabrication conditions are: room temperature deposition, 10nm of thickness, and 30% oxygen proportion.

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Periodical:

Advanced Materials Research (Volumes 546-547)

Pages:

38-41

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.546-547.38

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Online since:

July 2012

Authors:

Nan Hai Sun, Ya Fei Ren

Keywords:

Buffering Layer, Nickel Oxide (NiO), Photovoltaic Solar Cells, Power Conversion Efficiency

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