Research on TDDB Effect in High-k Materials

Abstract:

With continual scaling of ICs, the thickness of gate oxide becomes thinner and thinner which affects the reliability of semiconductor device greatly. The mechanism of time-dependent dielectric breakdown (TDDB) was analyzed. Six mathematical models of TDDB which were divided according to the position of defects and the physical property of charged particles were discussed. Then the dielectric breakdown characteristic of high k dielectrics and the relationships between the breakdown electric field, field acceleration parameter and dielectric constant were analyzed in detail. Finally, the relationships and mathematical models were verified by experimental data which provided theoretical basis for the choosing and use of high k materials.

• Periodical: Advanced Materials Research (Volume 548)
• Pages: 203-208
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.548.203
• Online since: July 2012
• Authors: Feng Ming Lu, Jiang Shao, Xiao Yu Liu, Xing Hao Wang
• Keywords: E Model, Equivalent Thickness, High-k Dielectrics, Time-Dependent Dielectric Breakdown

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