InGaPN/GaP Lattice-Matched Single Quantum Wells on GaP (001) Grown by MOVPE

Abstract:

Highly luminescence lattice-matched InxGa1-xP1-yNy/GaP single quantum wells (SQWs) on GaP (001) substrates were successfully grown by metalorganic vapor phase epitaxy (MOVPE). High-resolution X-ray diffraction measurements established that the lattice-matched InxGa1-xP1-yNy/GaP SQWs with various In (x = 0.050, 0.080, 0.135) and N (y = 0.025, 0.048, 0.071) contents were realized with excellent crystal quality and fairly flat interfaces. The results of photoluminescence (PL) and PL-excitation (PLE) showed the strong visible light emission (yellow to red emission) from the SQWs. With increasing In and N contents, the PL peak position and the PLE absorption edge exhibited the red-shift to lower energy, indicating the lowering of the InGaPN conduction band edge. The conduction band offset (∆Ec) of the InGaAPN/GaP quantum structure was estimated to be as high as 270 to 480 meV, which depends on the In and N contents in the well. Our results demonstrate that this novel InGaPN/GaP SQW system appropriates for the fabrication of light-emitting and laser diodes.

• Periodical: Advanced Materials Research (Volumes 55-57)
• Pages: 821-824
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.55-57.821
• Online since: August 2008
• Authors: D. Kaewket, S. Sanorpim, Sukkaneste Tungasmita, R. Katayama, Kentaro Onabe
• Keywords: III-V-Nitrides, InGaPN, Metalorganic Vapor Phase Epitaxy, Photoluminescence (PL), PL-Excitation, Single Quantum Wells

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