InGaPN/GaP Lattice-Matched Single Quantum Wells on GaP (001) Grown by MOVPE

Abstract:

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Highly luminescence lattice-matched InxGa1-xP1-yNy/GaP single quantum wells (SQWs) on GaP (001) substrates were successfully grown by metalorganic vapor phase epitaxy (MOVPE). High-resolution X-ray diffraction measurements established that the lattice-matched InxGa1-xP1-yNy/GaP SQWs with various In (x = 0.050, 0.080, 0.135) and N (y = 0.025, 0.048, 0.071) contents were realized with excellent crystal quality and fairly flat interfaces. The results of photoluminescence (PL) and PL-excitation (PLE) showed the strong visible light emission (yellow to red emission) from the SQWs. With increasing In and N contents, the PL peak position and the PLE absorption edge exhibited the red-shift to lower energy, indicating the lowering of the InGaPN conduction band edge. The conduction band offset (∆Ec) of the InGaAPN/GaP quantum structure was estimated to be as high as 270 to 480 meV, which depends on the In and N contents in the well. Our results demonstrate that this novel InGaPN/GaP SQW system appropriates for the fabrication of light-emitting and laser diodes.

Info:

Periodical:

Advanced Materials Research (Volumes 55-57)

Main Theme:

Edited by:

Tawee Tunkasiri

Pages:

821-824

DOI:

10.4028/www.scientific.net/AMR.55-57.821

Citation:

D. Kaewket et al., "InGaPN/GaP Lattice-Matched Single Quantum Wells on GaP (001) Grown by MOVPE", Advanced Materials Research, Vols. 55-57, pp. 821-824, 2008

Online since:

August 2008

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$35.00

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