P-Doped p-Type ZnΟ Films Deposited by Sputtering and Diffusing

Hui Qun Zhu; Yu Ming Li; Jun Long Li; Ling Sun

doi:10.4028/www.scientific.net/AMR.557-559.1984

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 557-559P-Doped p-Type ZnΟ Films Deposited by Sputtering...

P-Doped p-Type ZnΟ Films Deposited by Sputtering and Diffusing

Abstract:

P-doped ZnO thin films were prepared on different Si substrates by RF magnetron sputtering in Ar and O₂ mixed atmosphere. The P-doped ZnO films were changed from n-type to p-type by phosphorus diffusing from the n-Si substrates with higher phosphorus concentration into the ZnO films during depositing. The crystal structure of the ZnO films was examined by X-ray diffraction and confirmed to belong to wurtzite and highly c-axis oriented primarily perpendicular to the substrate. The Hall effect measurement results show that the corresponding hole concentration and risistivity of the P-doped ZnO film was 8.982×10¹⁷ cm^-3 and 1.489 Ω•cm respectively. This reveals that the P-doped ZnO thin film is really p-type behavior.

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Advanced Materials Research (Volumes 557-559)

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1984-1987

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https://doi.org/10.4028/www.scientific.net/AMR.557-559.1984

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July 2012

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Hui Qun Zhu, Yu Ming Li, Jun Long Li, Ling Sun

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Diffusing, Doped, Magnetron Sputtering, p-Type ZnΟ

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