Influence of Low Temperature Annealing on Structure and Photoelectric Properties of MgZnO Thin Films

Xi Jian Zhang; Xiao Yu Liu; Xue Yan Zhang; Han Bin Wang; Qing Pu Wang; Hong Lei Ma

doi:10.4028/www.scientific.net/AMR.562-564.142

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 562-564Influence of Low Temperature Annealing on...

Influence of Low Temperature Annealing on Structure and Photoelectric Properties of MgZnO Thin Films

Abstract:

Structural and optical properties of MgxZn1-xO (x=0.23) thin films grown by radio frequency (R.F.) magnetron sputtering and annealed with different temperature (from 100°C to 400°C) are reported. The films were single-phase, highly c-axis oriented and wurtzite structure. The transmission spectra, recorded in the visible range, reveal a high transmission coefficient (about 95 %) in the obtained films. Besides, when the annealing temperature is 100°C, the crystalline grains are smooth, compact and uniformly distributed. As the annealing temperature increases from 100°C to 400°C, the crystalline grains get larger, but the annealing temperature does not influence optical transmittance obviously.

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Periodical:

Advanced Materials Research (Volumes 562-564)

Pages:

142-145

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.562-564.142

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Online since:

August 2012

Authors:

Xi Jian Zhang, Xiao Yu Liu, Xue Yan Zhang, Han Bin Wang, Qing Pu Wang, Hong Lei Ma

Keywords:

Annealing, MgZnO, Sputtering, Thin Film

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References

[1] A. B. Djurisic, A. M. C. Ng, and X. Y. Chen: Prog. Quant. Electron. Vol. 34 (2010), p.191.

Google Scholar

[2] A. K. Sharma, J. Narayan, J. F. Muth, C. W. Teng, C. Jin, A. Kvit, R. M. Kolbas, and O. W. Holland: Appl. Phys. Lett. Vol. 75 (1999), p.3327.

DOI: 10.1063/1.125340

Google Scholar

[3] P. Prathap, A. S. Reddy, G. R. Reddy, R. W. Miles, and K. T. R. Reddy: Sol. Energ. Mat. Sol. C. Vol. 94 (2010), p.1434.

Google Scholar

[4] S. H. Bae, S. Y. Lee, H. Y. Kim, and S. Im: Opt. Mater. Vol. 17 (2001), p.327.

Google Scholar

[5] W. W. Liu, B. Yao, Y. F. Li, B. H. Li, C. J. Zheng, B. Y. Zhang, C. X. Shan, Z. Z. Zhang, J. Y. Zhang, and D. Z. Shen: Appl. Surf. Sci. Vol. 255 (2009), p.6745.

Google Scholar

[6] H. Moualkia, S. Hariech, and M. S. Aida: Thin Solid Films Vol. 518 (2009), p.1259.

DOI: 10.1016/j.tsf.2009.04.067

Google Scholar