Influence of Lapping Parameters on 6H-SiC Crystal Substrate (0001) C Surface Based on Diamond Particle

Jian Xiu Su; Xing Long Liu; Zhu Qing Zhang; Zhi Xiang Liu

doi:10.4028/www.scientific.net/AMR.565.237

Paper Titles

Thermo-Chemical Dressing of Coarse Grained Diamond Grinding Wheels
p.211

T-Dress, A Novel Approach in Dressing and Structuring of Grinding Wheels
p.217

Visualization of Grinding Wheel Surface Topography for Multiple Passes of Rotary Diamond Dresser
p.222

Preliminary Studies for Precision Polishing of Micro Structured Mold by Using Three-Dimensional Low Frequency Vibration Utilizing Piezoelectric Actuator Incorporated with Mechanical Amplitude Magnified Mechanism
p.231

Influence of Lapping Parameters on 6H-SiC Crystal Substrate (0001) C Surface Based on Diamond Particle
p.237

Influence of Polishing and Pressing Force on the Material Removal Rate in Fixed Abrasive Polishing with Compact Robot
p.243

Surface Roughness as a Function of Work Done by Tangential Force in Magneto-Rheological Finishing
p.249

Ultrasonic Vibration Assisted Mechanical Chemical Polishing (MCP) of Silicon Carbide
p.255

The Key Technologies and Advances of Ultra-Precision Single-Plane Polishing and Lapping Devices
p.261

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 565Influence of Lapping Parameters on 6H-SiC Crystal...

Influence of Lapping Parameters on 6H-SiC Crystal Substrate (0001) C Surface Based on Diamond Particle

Abstract:

The SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, such as semiconductor lighting, integrated circuits, and so on. In this paper, the influences of the lapping parameters, such as the rotational velocity of the lapping platen and the carrier and the polishing pressure on the material removal rate (MRR) and surface roughness Ra of SiC crystal substrate (0001) C surface based on the diamond particle in lapping. This study results will provide the reference for developing the abrasive paste, optimizing the process parameters and researching the material removal mechanism in lapping of SiC crystal substrate.

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Periodical:

Advanced Materials Research (Volume 565)

Pages:

237-242

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.565.237

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Online since:

September 2012

Authors:

Jian Xiu Su, Xing Long Liu, Zhu Qing Zhang, Zhi Xiang Liu

Keywords:

Lapping, Material Removal Rate (MRR), SiC Monocrystal Substrate, Surface Roughness (SR)

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References

[1] W.J. Everson, D.W. Snyder and V.D. Heydemann: Mater. Sci. Forum Vol. 338-342 (2000), p.837.

Google Scholar

[2] L. Canhua, B. Ishwarab, W. Rongiun: J. of Electro. Mater. Vol. 33, No. 5(2004), p.481～486.

Google Scholar

[3] Joon-Ho An, Gi –Sub Lee, Won-Jae Lee, et al. Mater. Sci. Forum Vol. 600-603 (2009), pp.831-834.

Google Scholar

[4] Hojun Lee, Boumyoung Park, Sukhoon Jeong: J. of Ceramic Processing Research. Vol. 10, No. 3, (2009), p.378~381.

Google Scholar

[5] Jiang Shouzhen, Xu Xiangang, Li Juan. Chinese J. Of Semicond. Vol. 28, No. 5 (2007), pp.810-814.

Google Scholar

[6] Xiao Qiang, LI Yan , LI Shujuan. New technology and new process, Vol. 6 (2009), pp.91-94.

Google Scholar

[7] LI Juan , CHEN Xiufang , MA Deying , et al. Functional materials, Vol. 37, No. 1 (2006), pp.70-72.

Google Scholar