Synthesis and Characterization of Quaternary Ti-Si-C-N Film Deposited by Middle Frequency Magnetron Sputtering

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Quaternary Ti-Si-C-N films were deposited Si wafer by middle frequency magnetron sputtering Ti80Si20 twin-targets in mixture atmosphere of Ar, CH4 and N2. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) results indicate that the films present an amorphous structure with no columnar structure. These films are quite uniform and dense without large particles. The film deposited at 10 sccm CH4 and 10 sccm N2 flow rates exhibits a maximum hardness of 18.9 GPa and high elastic recovery of 97%.

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Periodical:

Advanced Materials Research (Volumes 581-582)

Edited by:

Jimmy (C.M.) Kao, Wen-Pei Sung and Ran Chen

Pages:

540-543

Citation:

J. L. Jiang et al., "Synthesis and Characterization of Quaternary Ti-Si-C-N Film Deposited by Middle Frequency Magnetron Sputtering", Advanced Materials Research, Vols. 581-582, pp. 540-543, 2012

Online since:

October 2012

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$38.00

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