Paper Title:
Characterization of MeV Ion-Irradiated SiCf/SiC Composites Prepared with Different Methods
  Abstract

To estimate the ion-irradiation effect on various types of SiCf/SiC composites, a silicon self-ion irradiation was performed at temperatures of 600 °C and 1200 °C and at doses of 5 dpa and 20 dpa, respectively. These SiCf/SiC composites were prepared by different processes such as CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressing (HP) method. Hardness was measured by a nano-indentation tester and microstructural changes were observed by TEM with SAD(selected area diffraction) technique for the specimens prepared by FIB (Focused Ion Beam) milling. The damage dose was calculated by the SRIM2003 code and then compared with microstructureal observation.

  Info
Periodical
Edited by
Ch. Linsmeier and M. Reinelt
Pages
257-262
DOI
10.4028/www.scientific.net/AMR.59.257
Citation
J. Y. Park, S. M. Kang, W. J. Kim, A. Kohyama, "Characterization of MeV Ion-Irradiated SiCf/SiC Composites Prepared with Different Methods", Advanced Materials Research, Vol. 59, pp. 257-262, 2009
Online since
December 2008
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Xing Zhong Cao, Er Yang Lu, Shuo Xue Jin, Yi Hao Gong, Yuan Chao Hu, Te Zhu, Peng Zhang, Long Wei, Bao Yi Wang
Chapter 4: Metals and Alloys
Abstract:Solution annealed type 316L austenitic stainless steels were irradiated using 2 MeV Fe ions at room temperature. The implanted fluences were...
155
Authors: Takeshi Ohshima, Tomoya Honda, Shinobu Onoda, Takahiro Makino, Moriyoshi Haruyama, Tomihiro Kamiya, Takahiro Satoh, Yasuto Hijikata, Wataru Kada, Osamu Hanaizumi, Alexander Lohrmann, James R. Klein, Brett C. Johnson, Jeffrey C. McCallum, Stefania Castelletto, Brant C. Gibson, Hannes Kraus, Vladimir Dyakonov, G.V. Astakhov
3.3: Band Structure, Charge Transport, Point Defects
Abstract:Proton beam writing was carried out into high purity semi-insulating 4H-SiC bulk substrates. Luminescent defects created in the SiC by proton...
233