Paper Titles

Chaotic Grenade Explosion Algorithms for Global Numerical Optimization
p.1787

Homotopy-Inspired Cat Swarm Algorithm for Global Optimization
p.1793

Homotopy-Inspired Grenade Explosion Algorithm for Global Numerical Optimization
p.1798

Study on On the Cross-Sectional Shape Change of the Profiled Fiber along the Spinning Path in Melt Spinning
p.1804

Quantification of N₂⁺ Implanted AES Depth Profiling Data in Al
p.1808

The Impact of Roundness of Granular Materials on Physical Modeling Results
p.1814

Research on NX-Based Progressive Die Design
p.1818

Shifting Analysis and Simulation of Automated Mechanical Transmission without Separating Clutch
p.1822

Ship Lines Modeling Theory of High-Speed Ship Based on the Partial Differential Equations
p.1827

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 602-604Quantification of N2+ Implanted AES Depth...

Quantification of N₂⁺ Implanted AES Depth Profiling Data in Al

Article Preview

Abstract:

The nitrogen implanted profile in aluminum generated by 60keV N₂⁺ bombardment is simulated numerically by the Stopping and Range of Ions in Matter (SRIM) program and is fitted analytically by the Schulz-Wittmaack expression. Taking the SRIM simulated profile as true concentration-depth profile of implanted nitrogen in aluminum matrix, the corresponding measured AES depth profiling data of implanted nitrogen are well fitted by the Mixing-Roughness-Information (MRI) model.

You might also be interested in these eBooks

Progress in Materials and Processes

Info:

Periodical:

Advanced Materials Research (Volumes 602-604)

Pages:

1808-1813

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.602-604.1808

Citation:

Cite this paper

Online since:

December 2012

Authors:

Shao Ping Rao, Yi Liu, Xiao Yin Wang, Wei Jian, Jiang Yong Wang

Keywords:

AES Depth Profile, Mri Model, SRIM Simulation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] J.F. Ziegler, SRIM Code, IBM Corporation, Yorktown Heights, NY, information on http://www.srim.org

[2] S. Hofmann, J.Y. Wang: J. Surf. Anal. Vol. 10 (2003), p.52.

[3] S. Hofmann: Appl. Surf. Sci. Vol. 241 (2005), p.113.

[4] S. Hofmann: Thin Solid Film, Vol. 398 (2001), p.336.

[5] J.Y. Wang, S. Hofmann, A. Zalar, E.J. Mittemeijer: Thin Solid Films Vol. 444 (2003), p.120.

[6] Y. Miyagawa, S. Miyagawa: J. Appl. Phys. Vol. 54 (1983), p.7124.

[7] L.G. Haggmark, W.D. Wilson: J. Nucl. Mater. Vol. 76 (1978), p.149.

[8] J.F. Ziegler, in: Ion Implantation Science and Technology, 2nd Edn. Academic Press, Inc., (1988).

[9] J. Liu, W.N. Lennard, J.K. Lee: Applied Surface Science. Vol. 253 (2006), p.937.

[10] H. Amekura, O.A. Plaksin, N. Umeda, et al.: Vacuum. Vol. 80 (2006), p.802.

[11] Zhao Jun Han, Beng Kang Tay, Peter C.T. Ha, Jia Yin Sze, Daniel H.C. Chua: J. Appl. Phys. Vol. 101 (2007), p.053301.

[12] F. Schulz and K. Wittmaack: Radiat. Eff. Vol. 29 (1976), p.31.

[13] Y. Liu, J.Y. Wang, S. Hofmann, J. Kovac: Advanced Material Research, Vol. 557 (2012), p.1635.

[14] S. Hofmann: Surf. Interface Anal. Vol. 21 (1994), p.673.

[15] J.Y. Wang, U. Starke and E.J. Mittemeijer: Thin Solid Films, Vol. 517 (2009), p.3402.

[16] D. Marton, J. Fine: Thin Solid Films, Vol. 175 (1990), p.79.

[17] NIST Electron EAL, NIST Database 82, 2001.

[18] Y.Z. Chen, S. Wu, L.R. Shen: Chinese Nucl. Tech. Vol. 26 (2003), p.295.