High Efficiency Performance of Stack-Gate 0.35um P-Channel Flash EPROMs

Shen Li Chen; Der Jang Tseng

doi:10.4028/www.scientific.net/AMR.605-607.2035

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 605-607High Efficiency Performance of Stack-Gate 0.35um...

High Efficiency Performance of Stack-Gate 0.35um P-Channel Flash EPROMs

Abstract:

The programming mechanism and erasing efficiency in P-channel flash EPROMs are presented in this paper. With impact ionization programming mechanism, reliability problem is effective reduced. And, the margin of VTH shifts is obvious from –1V to –7.6V for deeply programming or erasing. For the low voltage operation, this high efficiency stack gate flash EPROM can be easily implemented.

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Periodical:

Advanced Materials Research (Volumes 605-607)

Pages:

2035-2038

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.605-607.2035

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Online since:

December 2012

Authors:

Shen Li Chen, Der Jang Tseng

Keywords:

Band-to-Band Tunneling (BTBT), Channel-Hot-Hole Induced Hot-Electron Injection, Control Gate (CG), Erase, Flash EPROM, Floating Gate (FG), Non-Volatile Memory (NVM), Program, Stack Gate

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