A High Light Response of Silicon P-I-N Detector by an AR Thin Film

Abstract:

For a transmission system, there is always required a light detector with high access speed and high sensitivity. The silicon light detector will achieve those requirements under the consideration of cost and reliability. Generally, the surface of this device will be covered by a passivation layer to protect from external damage or wet erosion. As for a light detector, the passivation layer must possess the anti-reflect ability to increase the absorption of light. In this paper, we have taken the P-I-N silicon photodiode as the main part and compared the difference light absorption for different passivation-material layers. Eventually, according to the experimental results, the optimized thin film structure can increase about 17.94% light response.

• Periodical: Advanced Materials Research (Volumes 608-609)
• Pages: 1305-1308
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.608-609.1305
• Online since: December 2012
• Authors: Shen Li Chen, Su Ping Lee
• Keywords: Anti-Reflection, Light Response, Passivation Thin Film, Silicon Photodiode

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DOI: 10.1109/smelec.2010.5549491

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