Effect of Annealing Temperature on Electrical Properties of ZnTe Layers Grown by Thermal Evaporation

Cheng Hsing Hsu; Ching Fang Tseng; Yi Ting Yu; Pai Chuan Yang; Chun Hung Lai; Jenn Sen  Lin; His Wen Yang

doi:10.4028/www.scientific.net/AMR.608-609.1314

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 608-609Effect of Annealing Temperature on Electrical...

Effect of Annealing Temperature on Electrical Properties of ZnTe Layers Grown by Thermal Evaporation

Abstract:

The electrical properties of evaporated ZnTe films were investigated with emphasis on the effects of an annealing temperature from 600oC to 800oC by RTA technique. Crystallinity, carrier concentration, sheet resistance, and mobility are shown to be dependent on the annealing temperature. The highest carrier concentration and lowest sheet resistance are 7.9×10¹⁵ cm^-3 and 9300 Ω/□ at an annealing temperature of 700oC, respectively. The mobility was found to vary from 20 to 50 cm²V^-1S^-1. The ZnTe thin films using thermal evaporation can find applications in solar cell or light emitting diodes

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Periodical:

Advanced Materials Research (Volumes 608-609)

Pages:

1314-1317

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.608-609.1314

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Online since:

December 2012

Authors:

Cheng Hsing Hsu, Ching Fang Tseng, Yi Ting Yu, Pai Chuan Yang, Chun Hung Lai, Jenn Sen Lin, His Wen Yang

Keywords:

Electrical Properties, Thermal Evaporation, ZnTe Films

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