Investigation of the Temperature Character of IGBT Wire Bonding Lift-Off Based the 3-D Thermal-Electro Coupling FEM

Li Bing Zheng; Han Li; Peng Yun Jin; Hua Chao Fang; Chun Lei Wang; Zhi Ping Wang

doi:10.4028/www.scientific.net/AMR.616-618.1689

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 616-618Investigation of the Temperature Character of IGBT...

Investigation of the Temperature Character of IGBT Wire Bonding Lift-Off Based the 3-D Thermal-Electro Coupling FEM

Abstract:

Al wire bonding lift-off is one of the main failure modes of IGBT module. When the severity of the failure mode is different, the temperature character of IGBT is also different. This paper presents a methodology based on 3D electro-thermal coupling finite elements modeling intended to analyze the relation between the failure degree and the temperature, and compares the influence degree of Al wire bonding lift-off to the performance of IGBT module. This method and the corresponding results help to evaluate Al wire bonding lift-off how they influence the performance of IGBT, determine the failure, establish the failure standards and find the optimization of structure design.

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Periodical:

Advanced Materials Research (Volumes 616-618)

Pages:

1689-1692

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.616-618.1689

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Online since:

December 2012

Authors:

Li Bing Zheng, Han Li, Peng Yun Jin, Hua Chao Fang, Chun Lei Wang, Zhi Ping Wang

Keywords:

Bonding Lift-Off, Finite Element, Insulated Gate Bipolar Transistor (IGBT), Numerical Simulation, Thermal-Electric Coupling

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