Stress Induced in Al2O3 Films as Deposited onto Al2O3TiC Substrate by RF Diode Sputtering

H. Panitchakan; Pichet Limsuwan

doi:10.4028/www.scientific.net/AMR.622-623.716

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 622-623Stress Induced in Al2O3 Films as Deposited onto...

Stress Induced in Al₂O₃ Films as Deposited onto Al₂O₃TiC Substrate by RF Diode Sputtering

Abstract:

Al₂O₃ films were deposited onto Al₂O₃-TiC substrates by RF diode sputtering. The Al₂O₃ films were deposited at various substrate bias voltages from -80 to -180 V, sputtering powers from 4 to 8 kW and operating pressures from 20 to 30 mTorr. The stress induced in Al2O3 films was measured. The results show that the stress induced in all prepared Al₂O₃ films is tensile stress. The stress slightly increased with increasing substrate bias voltage whereas it increased linearly with increasing operating pressure. However, the stress was almost constant as the sputtering was increased from 5 to 8 kW and significantly decreased as the sputtering power was decreased below 5 kW.

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Periodical:

Advanced Materials Research (Volumes 622-623)

Pages:

716-719

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.622-623.716

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Online since:

December 2012

Authors:

H. Panitchakan, Pichet Limsuwan

Keywords:

Al₂O₃ Film, RF Diode Sputtering, Stress, Stress in the Film

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