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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 631-632Radiation Damage Effects in Si Materials and...

Radiation Damage Effects in Si Materials and Detectors

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Abstract:

Silicon sensors, widely used in high energy and nuclear physics experiments, suffer severe radiation damage that leads to degradations in sensor performance. These degradations include significant increases in leakage current, bulk resistivity, space charge concentration, and free carrier trapping. For LHC (Large Hadron Collider) applications, where the total fluence is in the order of 1x10¹⁵ neq/cm² for 10 years, the increase in space charge concentration has been the main problem since it can significantly increase the sensor full depletion voltage, causing either breakdown if operated at high biases or charge collection loss if operated at lower biases than full depletion. For LHC Upgrade, or the sLHC, however, with an increased total fluence up to 1x10¹⁶ neq/cm², the main limiting factor for Si detector operation is the severe trapping of free carriers by radiation-induced defect levels.

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Periodical:

Advanced Materials Research (Volumes 631-632)

Pages:

216-226

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.631-632.216

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Online since:

January 2013

Authors:

Zheng Li

Keywords:

3D Detectors, CID Detectors, Damage, Detectors Radiation, Free Carrier Trapping, Radiation Hardness, Radiation Tolerance, Si Sensor, Space Charge Transformation

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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