A Post-Si CMP Cleaning Using BDD Film Electrochemical Oxidation

Ya Dong Zhu; Xiao Ping Yang; Bao Hong Gao

doi:10.4028/www.scientific.net/AMR.634-638.169

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 634-638A Post-Si CMP Cleaning Using BDD Film...

A Post-Si CMP Cleaning Using BDD Film Electrochemical Oxidation

Abstract:

This paper presents a post-Si CMP cleaning using the boron-doped diamond (BDD) film electrode as anode in the electrochemical cleaning method. The BDD film electrode has wide potential window and high oxygen evolution potential, so it is able to electrochemically generate super-advanced oxidation free radicals, such as hydroxyl radicals, oxygen free radicals and so on. And the sub-product of the radicals are ozone and hydrogen peroxide. And the BDD film electrode electrochemically oxidation is an advanced oxidation technology. First using the surfactant to remove particles contaminants, then following this post-Si CMP cleaning, it can effectively remove organic as well as the adsorbed surfactant on the surface. The experiments of cleaning post-Si CMP wafer are introduced in this paper, and the results indicated that the effective cleaning process can meet the continuous development of microelectronic industry cleaning needs.

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Periodical:

Advanced Materials Research (Volumes 634-638)

Pages:

169-172

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.634-638.169

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Online since:

January 2013

Authors:

Ya Dong Zhu, Xiao Ping Yang, Bao Hong Gao

Keywords:

Diamond Film, Post CMP Cleaning, Wafer

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