Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation

Jing Lv

doi:10.4028/www.scientific.net/AMR.634-638.2458

Paper Titles

Artificial-Neural-Network Prediction of Device Behaviors in Submicron MOS Transistors
p.2442

Charge Programming and Erasing Characteristics of the Submicron Stacked-Gate Flash Cells
p.2446

Effect of Ca Doping on Crystal Structure of the Misfit-Layered Bi-Sr-Co-O Thermoelectric Materials
p.2450

Effects of Surfactants on Particle Size and Luminescence Properties of Ca_1.98MgSiO₅:Eu²⁺_0.02 Phosphor Prepared by Sol-Gel Method
p.2454

Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
p.2458

Fluorescence Enhancement of Europium(III) Perchlorate by 2,2′-Dipyridyl on Bis(benzylsulfinyl)methane Complex
p.2462

Fluorescence Enhancement of Europium(III) Perchlorate by Salicylic Acid on Phenyl-Naphthoylmethyl Sulfoxide Complex and Luminescence Mechanism
p.2466

Growth and Characterization of CdZnTe Bulk Crystals Grown by Temperature Gradient Solution Growth
p.2470

Fabrication of Microcrystalline Cellulose/CdS Nanocomposites and their Photocatalytic Properties
p.2475

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 634-638Effects of Annealing in Air on Structure and...

Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation

Abstract:

Al films were prepared on quartz substrates by thermal evaporation. The effects of annealing in air on structure and optical and electrical properties have been studied. It is found that the annealing in air will affect on structure and morphology of the films, which results in the difference in the optical and electrical properties. The as-deposited film is amorphous, the films annealed at 200 and 400oC are polycrystalline. After annealed at 600oC, the film was oxidized and changed to porous γ-Al2O3. The film annealed at 200 oC has the maximum reflectance and at 400 oC has the minimum resistivity in all samples. While for the film annealed at 600 oC, the resistivity is close to be infinite, the reflectance is the minimum at wavelength ranging from 400 to 800 nm in all the samples.

You might also be interested in these eBooks

Advances in Chemical, Material and Metallurgical Engineering

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 634-638)

Pages:

2458-2461

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.634-638.2458

Citation:

Cite this paper

Online since:

January 2013

Authors:

Jing Lv

Keywords:

Al Films, Annealing in Air, Electrical and Optical Properties, Structure

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] D. Adams and T. L. Alford, Encapsulated silver for integrated circuit metallization, Mater. Sci. Eng., R 40 (2003) 207-250.

Google Scholar

[2] S. Lee, J. H. Son, G. H. Jung, Y. G. Kim, C. Y. Kim, Y. J. Yoon, and J. -L. Lee, Highly reflective MgAl alloy/Ag/Ru Ohmic contact with low contact resistivity on p-type GaN, Appl. Phys. Lett. 91(2007) 222115-1-3.

DOI: 10.1063/1.2820877

Google Scholar

[3] R. E. Hummel, Reflectivity of silver- and aluminium-based alloys for solar reflectors, Solar Energy 27 (1981) 449-455.

DOI: 10.1016/0038-092x(81)90040-2

Google Scholar

[4] J.O. Song, D.S. Leem, J. S. Kwak, O. H. Nam, Y. Park, and T.Y. Seong, Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes, Appl. Phys. Lett. 83(2004)4490.

DOI: 10.1063/1.1633992

Google Scholar

[5] J.Y. Kim, S.I. Na, G.Y. Ha, M.K. Kwon, Il-K. Park, J. H. Lim, and S. J. Parka, M. H. Kim, D. Choi and K. Min, Thermally stable and highly reflective AgAl alloy for enhancing light extraction efficiency in GaN light-emitting diodes, Appl. Phys. Lett. 88 (2006).

DOI: 10.1063/1.2168264

Google Scholar

[6] A. Kreimer and A. Frydman, The effect of lithography processing on the I–V characteristics of Al–Al2O3–Ag junctions, J. Appl. Phys. 97 (2005) 124502-124505.

DOI: 10.1063/1.1931035

Google Scholar

[7] C.E. Kennedy, R.V. Smilgys, D.A. Kirkpatrick and J. S. Ross, Optical performance and durability of solar reflectors protected by an alumina coating, Thin Solid Films 304 (1997) 303-309.

DOI: 10.1016/s0040-6090(97)00198-3

Google Scholar

[8] J. Lv, F. Lai, L. Lin, Y. Lin, Y. Qu and Z. Huang, Thermal stability of Ag films in air prepared by thermal evaporation. Appl. Surf. Sci. 253(17)7036-7040.

DOI: 10.1016/j.apsusc.2007.02.058

Google Scholar

[9] C.A. Volkert and C. Lingk, Effect of compression on grain growth in Al films, Appl. Phys. Lett., 73, (1998), p.3677.

DOI: 10.1063/1.122860

Google Scholar

[10] JCPDS Card No. 28-0317 (reference no. in PCPDFWIN (version 2. 02). JCPDS-International Centre for Diffraction Data).

Google Scholar