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Charge Programming and Erasing Characteristics of the Submicron Stacked-Gate Flash Cells

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Abstract:

A non-Maxwellian hot-carrier generation current model for simulation of charge injection and erasing in the 0.35um flash EEPROM device is presented in this paper. Unlike the conventional model, which is based on the local electric fields in the device, and it accounts for non-local effects resulting from the large variations in electric field in a submicron flash EEPROM. Good agreements between the measured and calculated results in the charge writing and the Fower-Nordheim erasing operations.

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Info:

Periodical:

Advanced Materials Research (Volumes 634-638)

Pages:

2446-2449

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.634-638.2446

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Cite this paper

Online since:

January 2013

Authors:

Shen Li Chen, Shun Tai Chung

Keywords:

Band to Band Tunneling (BTBT), Control Gate (CG), Flash EEPROM, Floating Gate (FG), Fower-Nordheim Erasing, Hot-Carrier Injection Programming, Non-Volatile Semiconductor Memory (NVSM)

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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