Photoelectric Characteristics of ZnO Nanowires Grown on AZO Thin Film

Su Hua Yang; Yi Ming Hsh; Li Hsiang Wang; Ming Yu Chang; Ting Jen Hsueh

doi:10.4028/www.scientific.net/AMR.646.51

Paper Titles

Preparation and Curing Behaviour of N-Phenylmaleimide-Styrene-Maleic Anhydride Copolymer/o-Cresol Formaldehyde Epoxy Resin Composite System
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Deterministic Single InGaN Quantum Dots grown on GaN Micro-Pyramid Arrays
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Study on the Effect of Matrix Properties on the Mechanical Performance of Carbon Fabric Composites
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Research Progress of Surface Treatment Techniques in the Application of Fouling Prevention and Heat Transfer Enhancement
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Photoelectric Characteristics of ZnO Nanowires Grown on AZO Thin Film
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Comparative Evaluation of Different Methods for Preparation of SiO₂/Epoxy Nanocomposite
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Influence of Magnetoelastic Anisotropy on Properties of Nanostructured Microwires
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Distribution Time of Gold Nanoparticles Pass through the Solid State Nanopore in Deionized Water
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Synthesis of Silver Nanowire Using a Template Wetting Process
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 646Photoelectric Characteristics of ZnO Nanowires...

Photoelectric Characteristics of ZnO Nanowires Grown on AZO Thin Film

Abstract:

The vapor transport method was used to grow ZnO nanowires on ZnO:Al (AZO) deposited silicon substrate. The optimal characteristic of ZnO nanowires was grown at 1100°C for 70 min, together with a ZnO/graphite weight ratio of 1:1 and N2/O2 flow ratio of 7:6. ZnO nanowires had a single crystalline structure and grew with a prefer direction in the (002) plane. Photoluminescence measurement showed that UV and visible green emission bands were observed. The turn-on electric field of ZnO nanowires was 0.11 V/μm and the maximum field emission current density was 1.8 mA/cm2. A high field enhancement factor of 1782 was evaluated.