Synthesis and Characterization of Nanocrystalline MgO for Optical Applications Using Sol-Gel Method

Abstract:

This paper describes the preparation and characterization of nanocrystalline Magnesium Oxide (MgO) using sol-gel technique for optical applications. The prepared nanocrystalline MgO was chemically homogeneous, very pure and specifically hydroxylated and was characterized by standard techniques. The size of the prepared nanoparticle was found to be 27.38 nm ± 0.65 nm and exhibited a face centered–cubic structure and exhibited two lifetimes viz., 1 = 0.24 ns and 2 = 8.9 ns. Its binding energy was found to be 50.9 eV, which showed the formation of single phase MgO on the surface. It behaved as semiconductor over the temperature range of 500 °C to 660 °C and as perfect insulator in the temperature range 100 °K to 300 °K.

• Periodical: Advanced Materials Research (Volume 646)
• Pages: 76-83
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.646.76
• Online since: January 2013
• Authors: K. Ravichandran, S. Vaishnavi, D. Nedumaran
• Keywords: Nanocrystalline MgO, Optical Applications, Sol-Gel Method, Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), X-Ray Photoelectron Spectroscopy

References

[1] Y. S. Yuan, M. S. Wong and S. S. Wang: Journal of Materials Research Vol. 11 (1996), No. 6, pp.1373-1382.

[2] D. Dobischek, H. Jacobs and J. Freely: Physical Review Vol. 91 (1953), No. 4, pp.804-812.

[3] S. H. C . Liang. and I. D. Gay: Journal of Catalysis, Vol. 101(1986), No. 2, pp.293-300.

[4] P. Yang and C. M. Lieber: Science Vol. 273 (1996), No. 5283, pp.1836-40.

[5] A. N. Copp: J. of American ceramic society Bulletin Vol. 74 (1995), No. 6, pp.135-137.

[6] X. Gerbaux, A. Hadni, M. Tazawa and J. C. Villegier: Appl. Optics Vol. 33 (1994), No. 1, pp.57-59.

DOI: 10.1364/ao.33.000057

[7] S. Andoh, K. Murase, S. Umeda: IEEE Transations on electron devices Vol. 23 (1976), No. 3, pp.319-324.

[8] S. G. Kim, J. Y. Kim and H. J. Kim: Thin Solid FilmsVol. 376 (2000), No. 1-2, pp.110-114.

[9] J. P. Boeuf: Journal of Physics D: Applied Physics Vol. 36 (2003), No. 6, p. R53.

[10] T. Urade, T. Iemori,    M. Osawa,    N. Nakayama,    I. Morita: IEEE Trans. Electron Devices Vol. 23 (1976), No. 3, pp.313-318.

DOI: 10.1109/t-ed.1976.18397

[11] S. G. MacLean and W. W. Duley: Journal of Physics and Chemistry of Solids Vol. 45 (1984), No. 2, pp.223-225.

[12] P. Vuoristo, T. Mantyla, P. Kettunen: J. Vac. Sci. Technol. A Vol. 4 (1986), No. 6, pp.2932-2937.

[13] D. K. Fork, F. A. Ponce, J. C. Tramontana: Appl. Phys. Lett. Vol. 58 (1991), No. 20, pp.2294-2296.

[14] T. Edwards, D. Walsh, M. Spurr, C. Rae, M. Dunn and P. Browne: Opt. Express Vol. 14 (2006), No. 4, pp.1582-89.

DOI: 10.1364/oe.14.001582

[15] D. Grischkowsky, S. Keiding, M. V. Exter and C. Fattinger: J. Opt. Soc. Am. B Vol. 7 (1990), No. 10, pp.2006-15.

[16] W. Gallagher: J. Appl. Phys Vol. 81 (1997), No. 8, p.3741.

[17] J. Daughton: J. Appl. Phys. Vol. 81 (1997), No. 8, p.3758.

[18] P. M. Levy and A. Fert: Physical Review B Vol. 74 (2006), No. 22, p.224446.

[19] L.W. Tutt and T. F. Boggess: Progress in Quantum Electronics, Vol. 17 (1993), No. 4, pp.299-338.

[20] S. Ardizzone, C.L. Bianchi, M. Fadoni and B. Vercelli: Applied Surface Science Vol. 119 (1997), No. 3-4, p.253 – 259.

DOI: 10.1016/s0169-4332(97)00180-3

[21] C. D. Wagner, L. E. Davis, J.E. Moulder. and G. E. Muilenberg: Hand book of X-ray Photoelectron Spectroscopy, Perkin-Elmer, Physical Electronics Division, printed in USA, Minnesota 55344, (1979).