W-Doped Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering

Shuang Chen; Li Fang Zhang; Cui Zhi Dong; Kuai Zhang; Xiudong Zhu

doi:10.4028/www.scientific.net/AMR.652-654.1747

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 652-654W-Doped Vanadium Oxide Thin Films Prepared by...

W-Doped Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering

Abstract:

W-doped Vanadium oxide thin films were prepared on the substrates of glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure and morphology were characterized by X-ray diffractometer and atomic force microscopy(AFM), respectively. The results show that,when the oxygen volume percent (Po₂) increasing from 15% to 25%, the films on the Si(100) were vanadium oxides with high-valences. After vacuum annealing at 500°C for 2h, the major phase of W doped films on glass is VO₂. The surface roughness of the film increase for the longer time annealing.

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Periodical:

Advanced Materials Research (Volumes 652-654)

Pages:

1747-1750

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.652-654.1747

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Online since:

January 2013

Authors:

Shuang Chen, Li Fang Zhang, Cui Zhi Dong, Kuai Zhang, Xiudong Zhu

Keywords:

Magnetron Sputtering, Thin Film, Tungsten Doping, Vanadium Oxide

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