Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

Jun Chen; Yue Hui Hu; Hong Hao Hu; Yi Chuan Chen

doi:10.4028/www.scientific.net/AMR.652-654.519

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 652-654Microstructural, Optical and Electrical Properties...

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

Abstract:

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

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Periodical:

Advanced Materials Research (Volumes 652-654)

Pages:

519-522

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.652-654.519

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Online since:

January 2013

Authors:

Jun Chen, Yue Hui Hu, Hong Hao Hu, Yi Chuan Chen

Keywords:

Sn Doping, Sol-Gel Method, Transparent Oxide Semiconductors, ZnO Thin Film

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