The Potential Realization of Solar-Blind Ultraviolet Detecting Using ZnO-Based Alloy Thin Film

Xue Ran Deng; Hong Deng

doi:10.4028/www.scientific.net/AMR.652-654.537

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 652-654The Potential Realization of Solar-Blind...

The Potential Realization of Solar-Blind Ultraviolet Detecting Using ZnO-Based Alloy Thin Film

Abstract:

A simple solar-blind ultraviolet (UV) detector was fabricated by using Al0.3Zn0.7O alloy thin films as photocathode and ZnO:Al (AZO) thin film as transparent electrode. Transmission spectra of Al0.3Zn0.7O alloy thin film was characterized through spectrometer and result showed significant enlargement of its optical band gap value. This alloy film only absorbed illumination whose wavelength is below 280nm, and the UV on/off characteristics of this detector presented very clearly. Scanning electron microscope (SEM) image revealed fine structure of both layers and the interface of these two layers performed clear and uniform.

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Advanced Materials Research (Volumes 652-654)

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537-541

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https://doi.org/10.4028/www.scientific.net/AMR.652-654.537

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January 2013

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Xue Ran Deng, Hong Deng

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Al_0.3Zn_0.7O Alloy Thin Film, Optical Band Gap, Solar-Blind UV Detecting

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References

[1] E. Munoz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. Sanchez-Garcia, E. Calleja, B. Beaumont and P. Gibart: Appl. Phys. Lett. Vol. 71 (1997), p.870

Google Scholar

[2] Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M. Z. Anwar, M. Asif Khan, D. Kuksenkov and H. Temkin: Appl. Phys. Lett. Vol. 70 (1997), p.2277

DOI: 10.1063/1.118837

Google Scholar

[3] M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao and G. C. Chi: Appl. Phys. Lett. Vol. 88 (2006), p.203508

Google Scholar

[4] E. Monroy, F. Calle, E. Munoz and F. Omnes: Appl. Phys. Lett. Vol. 74 (1999), p.3401

Google Scholar

[5] E. Monroy, F. Calle, E. Munoz, F. Omnes, P. Gibat and J. A. Munoz: Appl. Phys. Lett. Vol. 73 (1998), p.2146

Google Scholar

[6] E. Monroy, M. Hamilton, D. Walker, P. Kung, F. J. Sanchez and M. Razeghi: Appl. Phys. Lett. Vol. 74 (1999), p.1171

Google Scholar

[7] D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz and M. Razeghi: Appl. Phys. Lett. Vol. 72 (1998), p.3303

Google Scholar

[8] M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Tun and G. C. Chi: Appl. Phys. Lett. Vol. 89 (2006), p.183509

Google Scholar

[9] H. J. Looi, M. D. Whitfield and R. B. Jackman: Appl. Phys. Lett. Vol. 74 (1999), p.3332

Google Scholar

[10] J. Li, Y. Xu, T. Y. Hsiang and W. R. Donaldson: Appl. Phys. Lett. Vol. 84 (2004), p. (2091)

Google Scholar

[11] E. K. Liu, B. S. Zhu and J. S. Luo: Physics of Semiconductors, 6th edition (Publishing House of Electronics Industry, Beijing 2005) p.445

Google Scholar

[12] E. K. Liu, B. S. Zhu and J. S. Luo: Physics of Semiconductors, 6th edition (Publishing House of Electronics Industry, Beijing 2005) p.72

Google Scholar

[13] D. Vogel, P. Krüger and J. Pollmann: Phys. Rev. B Vol. 52 (1995), p. R14316

Google Scholar

[14] C. Lennon, R. Kodama, Y. Chang and S. Sivananthan. J. Vac. Sci. Technol. B Vol. 27 (2009), p.1641

Google Scholar