Investigation of the Temperature Character of IGBT Failure Mode Based the 3-D Thermal-Electro Coupling FEM

Pu Zhen He; Li Bing Zheng; Hua Chao Fang; Chun Lei Wang; Jun Hua

doi:10.4028/www.scientific.net/AMR.655-657.1576

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 655-657Investigation of the Temperature Character of IGBT...

Investigation of the Temperature Character of IGBT Failure Mode Based the 3-D Thermal-Electro Coupling FEM

Abstract:

Al wire bonding lift-off and solder delamination are the main failure modes of IGBT module. When the severity of the failure mode is different, the temperature character of IGBT is also different. This paper presents a methodology based on 3D electro-thermal coupling finite elements modeling intended to analyze the relation between the failure degree and the temperature, and compares the influence degree of two kinds of failure modes to the performance of IGBT module. The results suggest the bonding lift-off has more influence than the solder delamination on the same load and boundary conditions. This method and the corresponding results help to evaluate these failure modes how they influence the performance of IGBT, determine the failure, establish the failure standards and find the optimization of structure design.

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Periodical:

Advanced Materials Research (Volumes 655-657)

Pages:

1576-1580

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.655-657.1576

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Online since:

January 2013

Authors:

Pu Zhen He, Li Bing Zheng, Hua Chao Fang, Chun Lei Wang, Jun Hua

Keywords:

Bonding Lift-Off, Finite Element, Insulated Gate Bipolar Transistor (IGBT), Numerical Simulation, Solder Delamination, Thermal-Electric Coupling

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