Effect of Processing Parameters on the Microstructure of Silicon Nitride Coatings by Chemical Vapor Deposition
Silicon nitride coatings were prepared by chemical vapor deposition (CVD) method. The effect of raw precursor materials (SiH4 and NH3) ratio, gas flow amount, reaction temperature, and reaction pressure and deposition time to the microstructure, chemical compositions and crystal structures of the silicon nitride coatings are investigated. The results suggest that when the SiH4 and NH3 are used as the precursors, Ar is used as the protect gas, H2 is used as the carrier gas, the flow amount of SiH4 and NH3 is 200 sccm and 1000 sccm, the reaction pressure is 100 Pa, the reaction temperature is 900 oC and the deposition time is 30 min, the silicon nitride coatings with high deposition rate (~ 85 Å/min), small grain size (~ 0.2 µm) and high density are obtained. XRD results of the obtained silicon nitride coatings suggest their phase structure is amorphous.
Takashi Goto, Yibing Cheng, Zhengyi Fu and Lianmeng Zhang
J. L. Li et al., "Effect of Processing Parameters on the Microstructure of Silicon Nitride Coatings by Chemical Vapor Deposition", Advanced Materials Research, Vol. 66, pp. 175-178, 2009