Influence of Buffer Layers on the Structure and Optical Properties of Na-Doped ZnO Thin Films Prepared by Sol–Gel Method
Na-doped ZnO thin films on Si (100) substrates and on pure ZnO buffer layers prepared by sol-gel method, with the pure ZnO buffer layer annealing at 1073K for 90 min. X-ray diffraction (XRD) analyses revealed that all the films had a polycrystalline wurtzite structure and high c-axis preferred orientation. Photoluminescence(PL) spectra showed that the thin films produced strong emissions near ultraviolet(UV) and weak defect-related deep-level emission in visible regions. In addition, the effects of pure ZnO buffer layers on the structural and optical properties are discussed.
Takashi Goto, Yibing Cheng, Zhengyi Fu and Lianmeng Zhang
D. Y. Wang et al., "Influence of Buffer Layers on the Structure and Optical Properties of Na-Doped ZnO Thin Films Prepared by Sol–Gel Method", Advanced Materials Research, Vol. 66, pp. 254-257, 2009