Influence of Buffer Layers on the Structure and Optical Properties of Na-Doped ZnO Thin Films Prepared by Sol–Gel Method

Abstract:

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Na-doped ZnO thin films on Si (100) substrates and on pure ZnO buffer layers prepared by sol-gel method, with the pure ZnO buffer layer annealing at 1073K for 90 min. X-ray diffraction (XRD) analyses revealed that all the films had a polycrystalline wurtzite structure and high c-axis preferred orientation. Photoluminescence(PL) spectra showed that the thin films produced strong emissions near ultraviolet(UV) and weak defect-related deep-level emission in visible regions. In addition, the effects of pure ZnO buffer layers on the structural and optical properties are discussed.

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Periodical:

Edited by:

Takashi Goto, Yibing Cheng, Zhengyi Fu and Lianmeng Zhang

Pages:

254-257

DOI:

10.4028/www.scientific.net/AMR.66.254

Citation:

D. Y. Wang et al., "Influence of Buffer Layers on the Structure and Optical Properties of Na-Doped ZnO Thin Films Prepared by Sol–Gel Method", Advanced Materials Research, Vol. 66, pp. 254-257, 2009

Online since:

April 2009

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$35.00

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