Relationship between X-Ray Relative Diffraction Intensity and Integral Sensitivity of GaAlAs/GaAs Photocathode

Abstract:

To establish a methode for predicting the integral sensitivity of transmission-mode GaAs photocathodes, the relationship between X-ray relative diffraction intensity and integral sensitivity of GaAlAs/GaAs photocathode material is researched. After thermocompression bonding Si₃N₄/GaAlAs/GaAs/GaAlAs/GaAs epitaxial material to glass window in the vacuum condition, and chemically etching the GaAlAs buffer-layer and GaAs substrate, the glass/Si₃N₄/GaAlAs/GaAs photocathode module is formed. The X-ray relative diffraction intensity of the photocathode module is tested and calculated respectively, then the photocathode surface was activated in the ultrahigh vacuum chamber using the Cs-O activation technique. Following that, the integral sensitivity of the transmission-mode GaAs photocathode is measured by the spectral response measurement instrument in situ. It is found that the GaAlAs/GaAs photocathode material and photocathode module have similar X-ray relative diffraction shapes. The higher the similar degree of X-ray relative diffraction shape is, the bigger the X-ray relative diffraction intensity of photocathode module is, which results in the better photoemission capability and higher photocathode integral sensitivity. This method can be used as an evaluation criterion for the quality of transmission-mode GaAs photocathode module material.

• Periodical: Advanced Materials Research (Volume 664)
• Pages: 437-442
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.664.437
• Online since: February 2013
• Authors: Feng Shi, Ben Kang Chang, Hong Chang Cheng, Xiao Bing Xu, Yi Jun Zhang
• Keywords: GaAlAs/GaAs Photocathode, Integral Sensitivity, Thermocompression Bonding, X-Ray Relative Diffraction Intensity

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