Preparation and Characterization of Paste-Printed CIGSe Absorber Layers Sintered with 10% Tellurium or 5% Antimony Sulfide as a Sintering Aid

Abstract:

The Cu-deficient Cu(In,Ga)Se₂ (CIGSe) absorber layer for thin film solar cells was prepared by paste printing its powders followed by sintering at 550  650oC for 1 h with the assistance of sintering aid of 10% Te or 5% Sb₂S₃ to enhance densification. The variations of crystallinity, microstructure, composition, and electrical properties of resistivity, Hall mobility, and carrier concentration of CIGSe absorber layer with sintering temperature at different sintering aids were investigated. The advantage of this sintering process is the stability in composition and free of the problem of constituent vaporization. The major disadvantage of the CIGSe layer with 5% Sb₂S₃ as a sintering aid was a 5-time decrease in electrical mobility. Power conversion efficiencies of our devices with sintered CIGSe as an absorber layer were evaluated.

• Periodical: Advanced Materials Research (Volume 664)
• Pages: 463-468
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.664.463
• Online since: February 2013
• Authors: Dong Hau Kuo, Jian Jhih Chen
• Keywords: Cu(In,Ga)Se₂, Sintering, Sintering Aid, Solar Cell

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