Research on Topological Insulating Materials Induced by Uniaxial Strains with Properties of Insulating Materials

Abstract:

A series of calculations are carried out to investigate systematically the electronic band structure of bulk HgTe under uniaxial strains with the relaxed-volume by means of the full potential linearized augmented plane-wave method. Our results show that there is a topological insulating phase induced by proper uniaxial strains, which is consistent with previous theoretical and experimental results. Interestingly, the strain-induced band gap is large up to 0.21 and 0.17 eV in expansion and compression along c-direction, respectively. It is indicated that the bulk HgTe under proper uniaxial strains would be possibly made the room temperature application for material engineering with low energy consumption.

• Periodical: Advanced Materials Research (Volume 675)
• Pages: 180-183
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.675.180
• Online since: March 2013
• Authors: Hong Pei Han, Xin Ping Dong
• Keywords: First-Principle, Spintronic Devices, Topological Insulating Materials, Uniaxial Strain

References

[1] X. L. Qi and S. C. Zhang: Phys. Today Vol. 63(1) (2010), p.33.

[2] M. Z. Hasan and C. L. Kane: Rev. Mod. Phys. Vol. 82 (2010), p.3045.

[3] J. E. Moore: Nature Vol. 464 (2010), p.194.

[4] Chang Liu, Yongbin Lee, Takeshi Kondo, Eun Deok Mun, Malinda Caudle, B. N. Harmon, Sergey L. Bud'ko, Paul C. Canfield and Adam Kaminski: Phys. Rev. B Vol. 83 (2011), p.205133.

[5] H. J. Zhang, C. X. Liu, X. L. Qi, X. Dai, Z. Fang and S. C. Zhang: Nat. Phys. Vol. 5 (2009), p.438.

[6] J. E. Moore: Nat. Phys. Vol. 5 (2009), p.378.

[7] D. Hsieh, Y. Xia, L. Wray, D. Qian, A. Pal, J. H. Dil, F. Meier, J. Osterwalder, C. L. Kane, G. Bihlmayer, Y. S. Hor, R. J. Cava and M. Z. Hasan: Science Vol. 323 (2009), p.5916.

DOI: 10.1126/science.1167733

[8] D. Hsieh, D. Qian, L. Wray, Y. Xia, Y. S. Hor, R. J. Cava and M. Z. Hasan: Nature Vol. 452 (2008), p.970.

[9] Y. Xia, D. Qian, D. Hsieh, L. Wray, A. Pal, H. Lin, A. Bansil, D. Grauer, Y. S. Hor, R. J. Cava and M. Z. Hasan: Nat. Phys. Vol. 5 (2009), p.398.

DOI: 10.1038/nphys1274

[10] D. Hsieh, J. W. McIver, D. H. Torchinsky, D. R. Gardner, Y. S. Lee and N. Gedik: Phys. Rev. Lett. Vol. 106 (2011), p.057401.

[11] Y. Xia, D. Qian, L. Wray, D. Hsieh, G. F. Chen, J. L. Luo, N. L. Wang and M. Z. Hasan: Phys. Rev. Lett. Vol. 103 (2009), p.037002.

[12] Y. L. Chen, J. G. Analytis, J. H. Chu, Z. K. Liu, S. K. Mo, X. L. Qi, H. J. Zhang, D. H. Lu, X. Dai, Z. Fang, S. C. Zhang, I. R. Fisher, Z. Hussain and Z. X. Shen: Science Vol. 325 (2009), p.178.

DOI: 10.1126/science.1173034

[13] H. Lin, L. A. Wray, Y. Xia, S. Jia, R. J. Cava, A. Bansil and M. Z. Hasan: Nature Mater. Vol. 9 (2010), p.546.

[14] S. Chadov, X. Qi, J. Kübler, G. H. Fecher, C. Felser and S. C. Zhang: Nature Mater. Vol. 9 (2010), p.541.

[15] W. Al Sawai, Hsin Lin, R. S. Markiewicz, L. A. Wray, Y. Xia, S. Y. Xu, M. Z. Hasan and A. Bansil: Phys. Rev. B Vol. 82 (2010), p.125208.

[16] X. M. Zhang, W. H. Wang, E. K. Liu, G. D. Liu, Z. Y. Liu and G. H. Wu: Appl. Phys. Lett. Vol. 99 (2011), p.071901.

[17] D. Xiao, Y. Yao, W. Feng, J. Wen, W. Zhu, X. -Q. Chen, G. Malcolm Stocks and Z. Zhang: Phys. Rev. Lett. Vol. 105 (2010), p.096404.

[18] H. Lin, R. S. Markiewicz, L. A. Wray, L. Fu, M. Z. Hasan and A. Bansil: Phys. Rev. Lett. Vol. 105 (2010), p.036404.

[19] L. Fu and C. L. Kane: Phys. Rev. B Vol. 76 (2007), p.045302.

[20] Xi Dai, T. L. Hughes, X. L. Qi, Z. Fang and S. C. Zhang: Phys. Rev. B Vol. 77 (2008), p.125319.

[21] C. Brüne, C. X. Liu, E. G. Novik, E. M. Hankiewicz, H. Buhmann, Y. L. Chen, X. L. Qi, Z. X. Shen, S. C. Zhang and L.W. Molenkamp: Phys. Rev. Lett. Vol. 106 (2011), p.126803.

DOI: 10.1103/physrevlett.106.126803

[22] A. H. MacDonald, W. E. Pickett and D. D. Koelling: J. Phys. C Vol. 13 (1980), p.2675.

[23] T. Skauli and T. Colin: J. Cryst. Growth Vol. 222 (2001), p.719.