The Lattice Distortion-Induced Topological Insulating Material

Abstract:

We have carried out a series of calculations to investigate the electronic band structure of bulk HgTe strained along c-direction with the constant-volume by means of the full potential linearized augmented plane-wave method. Our results show that there is a topological insulating phase induced by the lattice distortions, which is in agreement with previous theoretical and experimental results. Importantly, the distortion-induced band gap is large up to 0.19 eV in either expansion or compression along c-direction. It is indicated that the bulk HgTe under proper lattice distortions would be possibly made the room temperature application for material engineering with low energy consumption.

• Periodical: Advanced Materials Research (Volume 676)
• Pages: 13-16
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.676.13
• Online since: March 2013
• Authors: Hong Pei Han
• Keywords: First-Principle, Lattice Distortions, Spintronic Devices, Topological Insulating Material

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